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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2406 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V(Min) *Collector Power Dissipation: PC= 25W@ TC= 25 *Good Linearity of hFE APPLICATIONS *Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w ww VALUE scs .i UNIT 80 V 80 V 5 V 4 A 0.4 A .cn mi e IC Collector Current-Continuous IB Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature PC 25 W TJ 150 Tstg Storage Temperature -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD2406 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.5 V VBE(on) ICBO Base-Emitter On Voltage IC= 3A; VCE= 5V VCB= 80V; IE= 0 1.5 V A A Collector Cutoff Current 30 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain hFE-2 DC Current Gain COB Output Capacitance fT Current-Gain--Bandwidth Product hFE-1 Classifications O 70-140 Y 120-240 w ww scs .i IC= 0.5A; VCE= 5V IC= 3A; VCE= 5V IE= 0; VCB= 10V; ftest= 1MHz .cn mi e 70 15 100 240 90 pF IC= 0.5A; VCE= 5V 8 MHz isc Websitewww.iscsemi.cn 2 |
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